CN
苏州美芝恩电子科技有限公司
CN
苏州美芝恩电子科技有限公司
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Vacuum Coating
RTA Annealing Furnace
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Use

Typical Applications

It is mainly used for defect elimination/impurity activation, silicide formation, preparation of ohmic/Schottky contacts, rapid oxidation/nitridation, elimination of film stress, and improvement of film adhesion after ion implantation of silicon and compound semiconductor materials.

Principle

The RTA annealing furnace uses a halogen tungsten lamp as a heat source and a thermocouple to measure the temperature of the annealing sample, heating the wafer or material to 150°C - 800°C in a very short time. The equipment uses water cooling and nitrogen purge to enable the cavity to quickly cool down in a short time.

Technical Indicators

  • Temperature range

    200—800℃ / 600—800℃

  • Annealing time

    ＜3min；

  • Heating rate

    0.5-180℃/s ；

  • Gas can be introduced

    O2、N2；

  • Temperature uniformity

    ±2℃；

  • Vacuum pressure

    ＜50mTorr The inner wall of the chambe is plated with gold to diffusely reflect infrared light, so that the wafer is heated evenly; each palte has a cooling water channel inside to cool down the temperature through cooling water

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